Bond Pull
Understanding Bond Pull Testing
Wire bonds are the electrical interconnects between semiconductor dies and package leads. In RF power transistors, multiple parallel gold or aluminum bond wires carry the signal current and define the package inductance. Bond integrity is critical: a single failed bond wire increases current density in remaining wires, leading to cascading failure.
Bond pull testing is performed on sample bonds during production qualification and as a periodic process monitor. Results are plotted on control charts to detect bonding machine degradation (worn capillary, ultrasonic energy drift, temperature changes).
33 μm (1.3 mil) Au wire: 5 gf minimum
25 μm Al wire: 2 gf minimum
50 μm Al ribbon: 5 gf minimum
Production target: 2-3× minimum
Cpk ≥ 1.33 for production capability
Failure Mode Analysis
| Mode | Location | Cause | Action |
|---|---|---|---|
| Wire break | Mid-span | Good bond (desired) | None |
| Ball lift | 1st bond | Pad contamination | Clean/requalify |
| Heel break | Bond foot | Loop stress | Adjust loop profile |
| Wedge lift | 2nd bond | Low US energy | Increase parameters |
Frequently Asked Questions
Procedure?
Hook under loop apex, pull at 10-50 mm/min, record peak force and failure mode. Wire break = good. Bond lift = investigate.
Minimum force?
25 μm Au: 3 gf. 33 μm Au: 5 gf. 50 μm Al ribbon: 5 gf. Production target: 2-3× spec minimum.
Failure modes?
Wire break (ideal), ball lift (contamination), heel break (stress), wedge lift (low energy). Non-wire-break triggers investigation.