Active Components

Bolt-Down Package

A Bolt-Down Package is a high-power RF transistor package featuring a metal flange (copper or copper-tungsten) that bolts directly to a heatsink through mounting holes. This provides thermal resistance as low as 0.1-0.5 °C/W, enabling 50-1000+ watts of power dissipation for LDMOS and GaN HEMT devices used in radar transmitters, broadcast amplifiers, ISM generators, and cellular base stations.
Category: Active Components
Rth: 0.1-0.5 °C/W

Understanding Bolt-Down Packages

The flange serves as both the electrical ground (source/emitter) and the thermal path. Copper flanges (400 W/m·K) are standard; copper-tungsten (CuW) or copper-molybdenum (CuMo) are used when the CTE must match ceramic substrates to prevent die cracking under thermal cycling.

The package includes a ceramic window frame (Al2O3 or BeO) that provides electrical isolation for the input and output leads while maintaining a hermetic seal. Internal matching networks (MOS capacitors, bond wires) pre-match the transistor die impedance from sub-ohm levels to a more manageable 2-5 Ω.

Thermal Design
Tj = THS + Pdiss·(Rth,jc + Rth,cs)
Rth,jc = junction to case (0.1-0.3 °C/W)
Rth,cs = case to sink (0.05-0.2 °C/W)

Example (200 W, 50% eff):
Pdiss = 200 W, Rth = 0.4 °C/W
ΔT = 80 °C above heatsink

Package vs SMT Thermal Comparison

PackageRth (°C/W)Max PdissMounting
Bolt-down flange0.1-0.51000+ WScrews to heatsink
SMT (QFN)5-205-10 WPCB solder
Over-mold (PQFN)1-510-50 WPCB + thermal pad
Coin/slug (exposed pad)2-820-50 WPCB + via array
Common Questions

Frequently Asked Questions

Why not SMT?

SMT limited to ~10 W (FR-4 thermal bottleneck). Bolt-down: direct metal-to-metal heatsink path, 0.1-0.5 °C/W, 1000+ W capable.

Package types?

Standard flange (2 holes), earless (clamp), pill/stud (UHF). Sizes: 10×7 mm (50 W) to 30×15 mm (500+ W).

Mounting?

Flat surface <25 μm deviation. Thermal compound 0.02-0.05 mm. Torque to spec (0.5-1.0 N·m). Verify with thermal imaging.

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